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| Schottky Barrier Diodes (SBD) MA3X740 Silicon epitaxial planar type For super high speed switching circuit For small current rectification * Two MA3X721s are contained in one package (series connection) * Allowing to rectify under (IF(AV) = 200 mA) condition (single diode value) 2.9 - 0.05 2.8 - 0.3 0.65 0.15 1.5 - 0.05 + 0.25 + 0.2 Unit : mm 0.65 0.15 0.95 1.9 0.2 I Features 1 3 2 + 0.2 0.95 1.45 0 to 0.1 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Peak forward current Single Double*1 Single Double*1 VR VRRM IF(AV) IFM IFSM Tj Tstg 30 30 200 130 300 220 1 0.7 150 -55 to +150 V V mA 0.1 to 0.3 0.4 0.2 mA Single Non-repetitive peak forward surge current*2 Double*1 Junction temperature Storage temperature A C C Marking Symbol: M3C Internal Connection 1 3 2 Note) *1 : Value per chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 30 3 Conditions Min Typ Max 50 0.55 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.8 Parameter Symbol Rating Unit 1.1 - 0.1 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 JEDEC : TO-236 Anode 2 EIAJ : SC-59 Mini Type Package (3-pin) 0.16 - 0.06 + 0.2 + 0.1 I Absolute Maximum Ratings Ta = 25C 0.4 - 0.05 + 0.1 1 MA3X740 IF V F 103 100C 25C 102 0.5 Schottky Barrier Diodes (SBD) VF Ta 105 Ta = 150C IR VR 104 Forward current IF (mA) Forward voltage VF (V) Reverse current IR (A) Ta = 150C - 20C 0.4 IF = 200 mA 103 100C 10 0.3 100 mA 0.2 102 1 10 25C 10-1 0.1 1 1 mA 10-2 0 0.1 0.2 0.3 0.4 0.5 0.6 0 -40 10-1 200 0 40 80 120 160 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 32 28 f = 1 MHz Ta = 25C IR T a 105 Terminal capacitance Ct (pF) 104 VR = 30 V 10 V 5V 20 16 12 8 4 0 Reverse current IR (A) 0 5 10 15 20 25 30 24 103 102 10 1 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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